Search results for "Quantum-confined Stark effect"

showing 9 items of 9 documents

Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: the effect of stacking faults in the reduction of the internal electri…

2016

The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacking faults inside these quantum dots is evidenced in the dependence of the photoluminescence with temperature and excitation power. A theoretical model for the electronic structure and optical properties of non-polar quantum dots, taking into account their realistic shapes, is presented which predicts a substantial reduction of the internal electric field but a persisting quantum confined Stark effect, comparable to that of polar GaN/AlN quantum dots. Modeling the effect of a 3 monolayer stacking fault inside the quantum dot, which acts as zinc-blende inclusion into the wurtzite matrix, result…

Materials sciencePhotoluminescenceStackingFOS: Physical sciences02 engineering and technologyElectronic structure01 natural sciencessymbols.namesakeCondensed Matter::Materials ScienceMesoscale and Nanoscale Physics (cond-mat.mes-hall)0103 physical sciencesGeneral Materials Science[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]ComputingMilieux_MISCELLANEOUSWurtzite crystal structure010302 applied physics[PHYS]Physics [physics]Condensed matter physicsCondensed Matter - Mesoscale and Nanoscale PhysicsMechanical EngineeringQuantum-confined Stark effectCiència dels materials021001 nanoscience & nanotechnologyCondensed Matter PhysicsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectStark effectMechanics of MaterialsQuantum dotsymbolsCristalls0210 nano-technologyStacking fault
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Wide Temperature Operation of 40-Gb/s 1550-nm Electroabsorption Modulated Lasers

2006

Electroabsorption modulated lasers (EMLs) exploiting the quantum confined Stark effect need thermoelectric coolers to achieve stable output power levels and dynamic extinction ratios. Temperature-independent operation is reported between 20/spl deg/C and 70/spl deg/C for InGaAlAs-InP-based monolithically integrated 1550-nm EMLs exploiting a shared active area at 40 Gb/s by actively controlling the electroabsorption modulator bias voltage. Dynamic extinction ratios of at least 8 dB and fiber-coupled mean modulated optical power of at least 0.85 mW are obtained over the mentioned temperature range.

Materials scienceThermoelectric coolingbusiness.industryQuantum-confined Stark effectOptical powerBiasingLaserAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic MaterialsSemiconductor laser theorylaw.inventionOpticsExtinction (optical mineralogy)ModulationlawOptoelectronicsElectrical and Electronic Engineeringbusiness
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Charge control in laterally coupled double quantum dots

2011

4 figuras, 4 páginas.-- PACS number(s): 78.67.Hc, 73.21.La, 78.55.Cr

PhysicsCondensed Matter - Mesoscale and Nanoscale PhysicsOptical propertiesQuantum dotsElectrons--EmissióQuantum point contactQuantum-confined Stark effectFOS: Physical sciencesElectronsElectronic structureCondensed Matter PhysicsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectElectronic Optical and Magnetic MaterialsCondensed Matter::Materials ScienceQuantum dot laserQuantum dotElectronic propertiesMesoscale and Nanoscale Physics (cond-mat.mes-hall)Electrons--EmissionEmission spectrumTrionAtomic physicsPunts quànticsQuantum tunnelling
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Lateral induced dipole moment and polarizability of excitons in a ZnO single quantum disk

2013

The lateral Stark shift of an exciton confined in a single ZnO quantum thin disk of radius R was calculated using a variational approach within the two bands effective mass approximation. It is shown that the exciton has a non negligible induced dipole moment when an external electric field is applied mainly for electron-hole separation below to the 3D excitonic Bohr radius. The behavior of the exciton lateral Stark shift proves the existence of an important correlation between the polarizability and the induced dipole moment.

PhysicsCondensed matter physicsCondensed Matter::OtherExcitonQuantum-confined Stark effectGeneral Physics and AstronomyCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter::Materials Sciencesymbols.namesakeDipoleStark effectPolarizabilityQuantum dotsymbolsPhysics::Atomic PhysicsBohr radiusBiexcitonJournal of Applied Physics
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Competition between carrier recombination and tunneling in quantum dots and rings under the action of electric fields

2008

6 páginas, 3 figuras.-- Proceedings of the 7th International Conference on Physics of Light-Matter Coupling in Nanostructures.

PhysicsCondensed matter physicsExcitonQuantum-confined Stark effectSingle quantum dotElectronCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsQuantum dotElectric fieldElectro-absorption modulatorCharged excitonsGeneral Materials ScienceElectrical and Electronic EngineeringWave functionQuantum tunnellingSuperlattices and Microstructures
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Spatial correlation of laser-generated electrons and holes in quantum wells

1995

The spatial correlation of hot electrons and holes generated by light in a semiconductor quantum well (QW) is studied. For hot electron-hole pairs in a polar material, this correlation is determined by the interaction with LO-phonons. We analyze the distribution F N (r, K) of electrons and holes which are created in a given light absorption process, with respect to their relative separation r and total quasimomentum ħK, after the emission of a number N of LO-phonons. The relationship between the spatial distribution of electrons and holes in these intermediate states and the cross-section of multi-phonon resonant Raman scattering (MPRRS) is established. Spatial correlation effects are stron…

PhysicsSpatial correlationbusiness.industryQuantum-confined Stark effectElectronCondensed Matter PhysicsLaserSpatial distributionElectronic Optical and Magnetic Materialslaw.inventionsymbols.namesakeSemiconductorlawsymbolsAtomic physicsbusinessRaman scatteringQuantum wellphysica status solidi (b)
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Energy levels of a quantum ring in a lateral electric field

2002

Abstract The electronic states of a semiconductor quantum ring (QR) under an applied lateral electric field are theoretically investigated and compared with those of a quantum disk of the same size. The eigenstates and eigenvalues of the Hamiltonian are obtained from a direct matrix diagonalization scheme. Numerical calculations are performed for a hard-wall confinement potential and the electronic states are obtained as a function of the electric field and the ratio r2/r1, where r2 (r1) is the outer (inner) radius of the ring. The effects of decreasing symmetry and mixing on the energy levels and wave functions due to the applied electric field are also studied. The direct optical absorpti…

Physicsbusiness.industryElectric susceptibilityQuantum-confined Stark effectGeneral EngineeringOptical fieldElectric fluxOpticsParametric processElectric fieldElectric potentialAtomic physicsWave functionbusinessMicroelectronics Journal
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Electric field control of the optical properties in magnetic mixed-valence molecules

2014

We propose the use of an electric field stimulus to strongly affect the optical properties of ferromagnetic mixed-valence (MV) dimers. This proposal is based on the prediction of an anomalous Stark effect in the intervalence absorption bands of these multi-electron MV systems. As distinguished from the conventional Stark effect observed in one-electron dimers, a strong change of the intervalence bands accompanies the crossing of the different spin levels caused by the application of an electric field. This new effect can be referred to as giant spin-dependent Stark effect. In spintronics this opens up the possibility for optical detection of the spin state in these magnetic molecules.

Valence (chemistry)Condensed matter physicsSpintronicsSpin statesChemistryQuantum-confined Stark effectGeneral Chemistrysymbols.namesakeStark effectFerromagnetismElectric fieldPhysics::Atomic and Molecular ClusterssymbolsMoleculeCondensed Matter::Strongly Correlated ElectronsChem. Sci.
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Ge quantum well plasmon-enhanced quantum confined Stark effect modulator

2014

ABSTRACTWe theoretically and experimentally investigate a novel modulation concept on silicon (Si) based on the combination of quantum confinement and plasmon enhancement effects. We experimentally study the suitability of Ge/SiGe quantum wells (QWs) on Si as the active material for a plasmon-enhanced optical modulator. We demonstrate that in QW structures absorption and modulation of light with transverse magnetic (TM) polarization are greatly enhanced due to favorable selection rules. Later, we theoretically study the plasmon propagation at the metal-Ge/SiGe QW interface. We design a novel Ge/SiGe QW structure that allows maximized overlap between the plasmonic mode and the underlying Ge/…

optical propertiesMaterials scienceoptical; optical properties; optoelectronic; Materials Science (all); Condensed Matter Physics; Mechanical Engineering; Mechanics of MaterialsSolid-state physicsCondensed matter physicsMechanical EngineeringQuantum-confined Stark effectPhysics::OpticsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectPolarization (waves)Condensed Matter PhysicsQuantum technologyOptical modulatorQuantum dotMechanics of MaterialsopticalMaterials Science (all)optoelectronicQuantum wellPlasmon
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